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2SB1079 参数 Datasheet PDF下载

2SB1079图片预览
型号: 2SB1079
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅三重扩散 [Silicon PNP Triple Diffused]
分类和应用: 晶体晶体管放大器局域网
文件页数/大小: 7 页 / 146 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SB1079
Maximum Collector Dissipation
Curve
120
Collector power dissipation P
C
(W)
–100
–30
–10
–3
–1.0
–0.3
–0.1
–3
Ta = 25°C
1 Shot Pulse
i
C(peak)
I
C(max)
D
1
µs
C
Area of Safe Operation
Collector current I
C
(A)
100
µs
T
C
80
=2
5
°
C
PW
=1
1m
s
s
0m
40
0
50
100
Case temperature T
C
(°C)
150
–10
–30
–100
–300
Collector to emitter voltage V
CE
(V)
Typical Output Characteristics
–20
DC current transfer ratio h
FE
–3.5
–3
–4
–2.5
–2
DC Current Transfer Ratio vs.
Collector Current
30000
10000
3000
1000
300
100
30
–0.3
V
CE
= –3 V
Pulse
Collector current I
C
(A)
–16
–1.5
5
°
C
=7 C
Ta 25
°
°
C
–25
–12
–1
–8
I
B
= –0.5 mA
–4
T
C
= 25°C
0
–2
–1
–3
–4
–5
Collector to emitter voltage V
CE
(V)
–1.0
–3
–10
Collector current I
C
(A)
–30