2SJ210
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Note
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
TEST CONDITIONS
V
DS
=
−60
V, V
GS
= 0 V
V
GS
=
m
20 V, V
DS
= 0 V
V
DS
=
−5.0
V, I
D
=
−1.0
µ
A
V
DS
=
−5.0
V, I
D
=
−10
mA
V
GS
=
−4.0
V, I
D
=
−10
mA
V
GS
=
−10
V, I
D
=
−10
mA
V
DS
=
−5.0
V
V
GS
= 0 V
f = 1 MHz
V
GS
=
−4.0
V, R
G
= 10
Ω
V
DD
=
−5.0
V
I
D
=
−10
mA
MIN.
TYP.
MAX.
−1.0
UNIT
µ
A
µ
A
V
mS
m
1.0
−1.4
20
−1.8
45
10
6
27
21
3
120
190
150
180
15
10
−2.4
Drain to Source On-state Resistance
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
<R>
Note
Pulsed
TEST CIRCUIT SWITCHING TIME
D.U.T.
R
L
PG.
R
G
V
DD
I
D
(−)
V
GS
(−)
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
I
D
Wave Form
V
GS
(−)
V
GS
Wave Form
0
10%
V
GS
90%
90%
90%
I
D
0 10%
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
2
Data Sheet D17906EJ3V0DS
RENESAS [ RENESAS TECHNOLOGY CORP ]
