2SJ486
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Channel dissipation
Channel temperature
Storage temperature
Note:
1. PW
≤
100
µs,
duty cycle
≤
10%
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)
Pch
Note 1
Value
–30
±10
–0.3
–0.6
150
150
–55 to +150
Unit
V
V
A
A
mW
°C
°C
Tch
Tstg
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Note:
2. Pulse test
Symbol
V
(BR) DSS
V
(BR) GSS
I
DSS
I
GSS
V
GS (off)
R
DS (on)
R
DS (on)
|y
fs
|
Ciss
Coss
Crss
t
d (on)
t
r
t
d (off)
t
f
Min
–30
±10
—
—
–0.5
—
—
0.4
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.5
0.7
0.65
45
76
5.4
120
340
850
550
Max
—
—
–1.0
±5.0
–1.5
0.65
1.2
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
Test Conditions
I
D
= –10
µA,
V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
DS
= –30 V, V
GS
= 0
V
GS
=
±6.5
V, V
DS
= 0
I
D
= –10
µA,
V
DS
= –5 V
I
D
= –100 mA, V
GS
= –4 V
Note 2
I
D
= –100 mA, V
GS
= –2.5 V
I
D
= –100 mA, V
DS
= –10 V
V
DS
= –10 V
V
GS
= 0
f = 1 MHz
V
GS
= –4 V
I
D
= –150 mA
R
L
= 66.6
Ω
Note 2
Note 2
Rev.3.00 Sep 07, 2005 page 2 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
