2SJ533
Reverse Drain Current vs.
Source to Drain Voltage
–50
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy E
AR
(mJ)
100
I
AP
= –30 A
V
DD
= –25 V
duty < 0.1 %
Rg
≥
50
Ω
Reverse Drain Current I
DR
(A)
–40
–10 V
–5 V
–20
V
GS
= 0
80
–30
60
40
–10
Pulse Test
0
0
–0.4
–0.8
–1.2
–1.6
–2.0
20
0
25
50
75
100
125
150
Source to Drain Voltage
V
SD
(V)
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
0.1
0.05
θch
– c (t) =
γ
s (t) •
θch
– c
θch
– c = 3.57°C/W, Tc = 25°C
P
DM
D=
PW
T
1m
10 m
100 m
1
10
PW
T
0.03
0.02
ls e
1
pu
0.0
t
ho
1s
100
µ
0.01
10
µ
Pulse Width PW (S)
Avalanche Test Circuit
Avalanche Waveform
1
• L • I
AP2
•
2
V
DSS
V
DSS
– V
DD
V
(BR)DSS
I
AP
V
DD
I
D
V
DS
V
DS
Monitor
L
I
AP
Monitor
E
AR
=
Rg
D.U.T
Vin
–15 V
50
Ω
V
DD
0
Rev.4.00 Sep 07, 2005 page 5 of 7
RENESAS [ RENESAS TECHNOLOGY CORP ]
