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2SK1317 参数 Datasheet PDF下载

2SK1317图片预览
型号: 2SK1317
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET [Silicon N Channel MOS FET]
分类和应用:
文件页数/大小: 7 页 / 83 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SK1317
Main Characteristics
Power vs. Temperature Derating
120
Maximum Safe Operation Area
10
3
D
Channel Dissipation Pch (W)
10
PW
C
O
pe
10
0
µ
s
µ
s
Drain Current I
D
(A)
=
ra
1
10
tio
m
(1
=
80
1.0
0.3
0.1
0.03
0.01
10
s
Sh
o
25
m
s
C
n
(T
t)
)
40
°
C
Operation in this area
is limited by R
DS (on)
Ta = 25
°
C
0
50
100
150
30
100
300
1,000 3,000 10,000
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
5
Pulse Test
15 V
2.0
10 V
8V
7V
3
6V
Typical Transfer Characteristics
Drain Current I
D
(A)
Drain Current I
D
(A)
4
1.6
V
DS
= 20 V
Pulse Test
1.2
2
0.8
75°C
T
C
= 25°C
–25°C
1
5V
V
GS
= 4 V
0.4
0
20
40
60
80
100
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
50
Pulse Test
40
I
D
= 3 A
30
2A
1A
0.5 A
0
4
8
12
16
20
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
50
20
10
5
Drain to Source Saturation Voltage V
DS (on)
(V)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
V
GS
= 10 V
15 V
20
2
1.0
0.5
0.1
Pulse Test
10
0.2
0.5
1.0
2
5
10
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 6