2SK1404
Static Drain to Source on State Resistance
vs. Temperature
5
V
GS
= 10 V
Pulse Test
4
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance
y
fs
(S)
10
5
V
DS
= 20 V
Pulse Test
3
I
D
= 5 A
2
2A
1
1A
2
1
0.5
Tc = –25°C
25°C
75°C
0.2
0.1
0.05
0
–40
0
40
80
120
160
0.1
0.2
0.5
1
2
5
Case Temperature Tc (°C)
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
10000
V
GS
= 0
f = 1 MHz
Body to Drain Diode Reverse
Recovery Time
1000
Reverse Recovery Time trr (ns)
500
Capacitance C (pF)
200
100
50
20
10
0.05
di / dt = 50 A /
µs
V
GS
= 0, Ta = 25°C
Pulse Test
0.1
0.2
0.5
1
2
5
1000
Ciss
Coss
100
Crss
10
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
1000
I
D
= 5 A
20
500
Switching Characteristics
V
GS
= 10 V, V
DD
= 30 V
PW = 2
µs,
duty
≤
1 %
Switching Time t (ns)
800
V
DD
= 100 V
250 V
400 V
V
GS
400
V
DS
V
DD
= 400 V
250 V
100 V
0
8
16
24
32
16
200
td(off)
100
tf
50
tr
td(on)
10
5
0.1
600
12
8
20
200
4
0
40
0
0.2
0.5
1
2
5
10
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.3.00 May 15, 2006 page 4 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
