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2SK1521 参数 Datasheet PDF下载

2SK1521图片预览
型号: 2SK1521
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET [Silicon N Channel MOS FET]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲局域网
文件页数/大小: 7 页 / 83 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
 浏览型号2SK1521的Datasheet PDF文件第1页浏览型号2SK1521的Datasheet PDF文件第2页浏览型号2SK1521的Datasheet PDF文件第4页浏览型号2SK1521的Datasheet PDF文件第5页浏览型号2SK1521的Datasheet PDF文件第6页浏览型号2SK1521的Datasheet PDF文件第7页  
2SK1521, 2SK1522
Main Characteristics
Power vs. Temperature Derating
300
1,000
300
a
are
his
(on)
nt
S
ni R
D
tio d by
era te
DC
Op limi
is
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current ID (A)
100
30
10
3
1
0.3
200
PW
10
10
0
=
Op
er
at
ion
10
(T
m
1m
s
µ
s
µ
s
s(
1
Sh
100
C
=
ot
)
25
°
C
)
Ta = 25°C
0.1
0
50
100
150
1
3
10
30
2SK1521
2SK1522
100
300
1,000
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
100
8V
10 V
6V
100
Typical Transfer Characteristics
V
DS
= 20 V
Pulse Test
Drain Current I
D
(A)
Pulse Test
5.5 V
Drain Current I
D
(A)
80
80
60
5V
60
40
40
20
4.5 V
V
GS
= 4 V
20
T
C
= 75
°
C
25
°
C
–25
°
C
0
4
8
12
16
20
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5
50 A
Pulse Test
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
1
Pulse Test
0.5
Drain to Source Saturation Voltage V
DS (on)
(V)
4
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
3
0.2
0.1
0.05
V
GS
= 10, 15 V
2
20 A
I
D
= 10 A
1
0.02
0.01
5
10
20
50
100 200
500
0
4
8
12
16
20
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 6