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2SK1527 参数 Datasheet PDF下载

2SK1527图片预览
型号: 2SK1527
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET [Silicon N Channel MOS FET]
分类和应用: 晶体晶体管功率场效应晶体管局域网
文件页数/大小: 7 页 / 83 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SK1526, 2SK1527
Main Characteristics
Power vs. Temperature Derating
300
Maximum Safe Operation Area
1,000
300
Channel Dissipation Pch (W)
100
30
10
3
1
0.3
0.1
200
100
thi
on
10
in R
DS (
10
µ
s
on by
i
0
rat
µ
s
PW
pe mited
O li
1m
DC
=
is
s
10
Op
m
er
s(
ati
1
on
Sh
(T
ot
)
C
=
25
°
C
)
Ta = 25
°
C
1
3
10
30
2SK1526
2SK1527
Drain Current I
D
(A)
a
are
)
s
0
50
100
150
100
300
1,000
Ambient Temperature Ta (°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
50
10 V
6V
50
Pulse Test
5V
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
Drain Current I
D
(A)
40
40
30
4.5 V
20
30
Ta = 75°C
25°C
–25°C
20
10
V
GS
= 4 V
10
0
4
8
12
16
20
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
Pulse Test
I
D
= 50 A
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
5
2
1
0.5
Pulse Test
Drain to Source Saturation Voltage V
DS (on)
(V)
8
6
4
20 A
2
10 A
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
0.2
V
GS
= 10 V, 15 V
0.1
0.05
2
5
10
20
50
100 200
0
2
4
6
8
10
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 6