2SK1517, 2SK1518
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
2SK1517
2SK1518
VDSS
450
500
V
Gate to source voltage
Drain current
VGSS
ID
±30
V
A
20
*1
Drain peak current
ID(pulse)
80
A
Body to drain diode reverse drain current
Channel dissipation
IDR
Pch*2
Tch
20
A
120
W
°C
°C
Channel temperature
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
450
500
±30
—
Typ
Max
Unit
Test conditions
Drain to source
breakdown voltage
2SK1517
2SK1518
V(BR)DSS
—
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
Gate to source leak current
V(BR)GSS
IGSS
—
—
—
—
V
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 360 V, VGS = 0
±10
250
µA
µA
Zero gate voltage drain
current
2SK1517
2SK1518
IDSS
—
V
DS = 400 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
RDS(on)
2.0
—
—
10
—
—
—
—
—
—
—
—
—
—
0.20
0.22
16
3.0
0.25
0.27
—
V
ID = 1 mA, VDS = 10 V
Static drain to source on 2SK1517
Ω
ID = 10 A, VGS = 10 V *3
ID = 10 A, VDS = 10 V *3
state resistance
2SK1518
Forward transfer admittance
Input capacitance
|yfs|
Ciss
Coss
Crss
td(on)
tr
S
3050
940
140
35
—
pF
pF
pF
ns
ns
ns
ns
V
VDS = 10 V, VGS = 0,
f = 1 MHz
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
—
—
—
ID = 10 A, VGS = 10 V,
RL = 3 Ω
130
240
105
1.0
—
Turn-off delay time
Fall time
td(off)
tf
—
—
Body to drain diode forward voltage
VDF
trr
—
IF = 20 A, VGS = 0
Body to drain diode reverse recovery
time
120
—
ns
IF = 20 A, VGS = 0,
diF/dt = 100 A/µs
Note: 3. Pulse test
Rev.2.00 Sep 07, 2005 page 2 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
