2SK2596
Silicon N-Channel MOS FET
UHF Power Amplifier
REJ03G0207-0300
(Previous ADE-208-1367(Z))
Rev.3.00
Feb.14.2005
Features
•
High power output, High gain, High efficiency
PG = 12.2 dB, Pout = 30.2 dBm,
ηD
= 45%min. (f = 836.5 MHz)
•
Compact package capable of surface mounting
Outline
PLZZ0004CA-A
(Previous code : UPAK)
D
2
3
G
1
1. Gate
2. Source
3. Drain
4. Source
4
S
Note: Marking is “BX“.
This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at Tc = 25°C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse) Note1
Pch
Note2
Tch
Tstg
Ratings
17
±10
0.4
1
3
150
–45 to +150
Unit
V
V
A
A
W
°C
°C
Rev.3.00, Feb.14.2005, page 1 of 4