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2SK3141 参数 Datasheet PDF下载

2SK3141图片预览
型号: 2SK3141
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET高速电源开关 [Silicon N Channel MOS FET High Speed Power Switching]
分类和应用: 晶体开关晶体管脉冲电源开关局域网
文件页数/大小: 8 页 / 87 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SK3141
Main Characteristics
Power vs. Temperature Derating
160
1000
300
Maximum Safe Operation Area
10
PW
Channel Dissipation Pch (W)
120
Drain Current I
D
(A)
100
30
10
10
=
10
µ
s
DC
1
0
µ
80
40
Operation in
3 this area is
limited by R
DS(on)
1
0.3
s
Op
ms
(1
e
s
(T rati
c = on
hot
)
25
°
C
)
m
s
0
50
100
150
200
0.1 Ta = 25°C
0.1 0.3
1
3
10
30
100
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
100
V
GS
= 10 V
Typical Transfer Characteristics
100
Pulse Test
Drain Current I
D
(A)
4V
60
3V
Drain Current I
D
(A)
80
5V
80
V
DS
= 10 V
Pulse Test
60
40
40
25°C
20
75°C
1
2
Tc = –25°C
3
4
5
20
2.5 V
0
2
4
6
8
10
0
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
100
Drain to Source Saturation Voltage
V
DS (on)
(V)
0.5
Pulse Test
Static Drain to Source on State Resistance
R
DS (on)
(mΩ)
Pulse Test
30
10
3
1
0.3
0.1
1
V
GS
= 4 V
0.4
0.3
I
D
= 50 A
10 V
0.2
0.1
10 A
0
4
8
12
20 A
16
20
3
10
30
100
300 1000
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.4.00 Sep 07, 2005 page 3 of 7