CT60AM-18F
Insulated Gate Bipolar Transistor
REJ03G1374-0200
(Previous: MEJ02G0023-0101)
Rev.2.00
Jul 07, 2006
Features
•
V
CES
: 900 V
•
I
C
: 60 A
•
Integrated fast-recovery diode
Appearance Figure
RENESAS Package code: PRSS0004ZC-A
(Package name: TO-3PL)
2, 4
4
1
1
2
3
3
1 : Gate
2 : Collector
3 : Emitter
4 : Collector
Applications
Microwave oven, Electromagnetic cooking devices, Rice-cookers
Maximum Ratings
(Tc = 25°C)
Parameter
Collector-emitter voltage
Gate-emitter voltage
Peak gate-emitter voltage
Collector current
Collector current (Pulse)
Emitter current
Maximum power dissipation
Junction temperature
Storage temperature
Symbol
V
CES
V
GES
V
GEM
I
C
I
CM
I
E
P
C
Tj
Tstg
Ratings
900
±25
±30
60
120
40
180
– 40 to +150
– 40 to +150
Unit
V
V
V
A
A
A
W
°C
°C
Conditions
V
GE
= 0 V
Rev.2.00 Jul 07, 2006 page 1 of 5
RENESAS [ RENESAS TECHNOLOGY CORP ]
