CY25BAJ-8F
Electrical Characteristics
(Tj = 25°C)
Parameter
Collector-emitter breakdown voltage
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Symbol
V
(BR)CES
I
CES
I
GES
V
GE(th)
V
CE(sat)
Min.
450
—
—
0.5
—
Typ.
—
—
—
0.7
4.0
Max.
—
10
±10
1.5
6.0
Unit
V
µA
µA
V
V
Test conditions
I
C
= 1 mA, V
GE
= 0 V
V
CE
= 400 V, V
GE
= 0 V
V
GE
=
±6
V, V
CE
= 0 V
V
CE
= 10 V, I
C
= 1 mA
V
CE
= 4 V, I
C
= 150 A
Performance Curves
Maximum Collector Current vs. Gate-Emitter Voltage
200
Pulse Collector Current I
CM
(A)
Tc = 70°C
C
M
= 400
µF
R
G
= 30
Ω
150
100
50
0
0
2
4
6
8
Gate-Emitter Voltage V
GE
(V)
Precautions on Usage
1. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the
device from electrostatic charge.
2. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And
peak reverse gate current during turn-off must become less than 0.1 A. (In general, when R
G (off)
= 30
Ω,
it is
satisfied.)
3. The operation life should be endured 5,000 shots under the charge current (I
Xe
≤
150 A : full luminescence
condition) of main capacitor (C
M
= 400 µF) which can endure repeated discharge of 5,000 times. Repetition period
under full luminescence condition is over 3 seconds.
4. Total operation hours applied to the gate-emitter voltage must be within 5,000 hours when V
GE
is driven at 6 V.
Order Code
Lead form
Standard packing
Quantity
Standard order code
Standard order
code example
CY25BAJ-8F-T13
Surface-mounted type Taping
3000 Type name – T +Direction (1 or 2) +3
Note: Please confirm the specification about the shipping in detail.
Rev.2.00,
May 23,2005,
page 2 of 3
RENESAS [ RENESAS TECHNOLOGY CORP ]
