MITSUBISHI Nch POWER MOSFET
FS3UM-9
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
40
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(Ω)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
10
T
C
=25°C
Pulse Test
8
T
C
=25°C
Pulse Test
32
V
GS
=10V
20V
24
I
D
=4A
16
3A
8
2A
1A
0
0
4
8
12
16
20
6
4
2
0
10
–2
2 3 5 7 10
–1
2 3 5 7 10
0
2 3 5 7 10
1
DRAIN CURRENT I
D
(A)
GATE-SOURCE VOLTAGE V
GS
(V)
TRANSFER CHARACTERISTICS
(TYPICAL)
10
T
C
=25°C
V
DS
=50V
Pulse Test
10
1
7
5
FORWARD TRANSFER
ADMITTANCE
y
fs
(S)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
V
DS
=10V
Pulse Test
DRAIN CURRENT I
D
(A)
8
6
3
2
10
0
7
5
3
2
10
–1 –1
10
2 3
5 7 10
0
T
C
=25°C
4
125°C
75°C
2
0
0
4
8
12
16
20
2 3
5 7 10
1
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
7
5
SWITCHING TIME (ns)
SWITCHING CHARACTERISTICS
(TYPICAL)
5
Ciss
3
2
t
f
10
2
7
5
3
2
10
1
7
5
10
–1
t
d(off)
Tch = 25°C
V
DD
= 200V
V
GS
= 10V
R
GEN
= R
GS
= 50Ω
CAPACITANCE
Ciss, Coss, Crss (pF)
3
2
10
2
7
5
3
2
Coss
10
1
7
Crss
5 Tch=25°C
f=1MHz
3 V
GS
=0V
2
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
2
DRAIN-SOURCE VOLTAGE V
DS
(V)
t
d(on)
t
r
2 3
5 7 10
0
2 3
5 7 10
1
DRAIN CURRENT I
D
(A)
Feb.1999
RENESAS [ RENESAS TECHNOLOGY CORP ]
