MITSUBISHI Nch POWER MOSFET
FS40SM-6
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
20
GATE-SOURCE VOLTAGE V
GS
(V)
SOURCE CURRENT I
S
(A)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
50
V
GS
= 0V
Pulse Test
25°C
30
75°C
Tch = 25°C
I
D
= 40A
16
V
DS
= 50V
100V
200V
8
T
C
=125°C
40
12
20
4
10
0
0
40
80
120
160
200
0
0
0.8
1.6
2.4
3.2
4.0
GATE CHARGE Q
g
(nC)
SOURCE-DRAIN VOLTAGE V
SD
(V)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25°C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(t°C)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
–50
0
50
100
150
5.0
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
V
DS
= 10V
I
D
= 1mA
4.0
V
GS
= 10V
I
D
= 1/2I
D
Pulse Test
3.0
2.0
1.0
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25°C)
TRANSIENT THERMAL IMPEDANCE Z
th (ch – c)
(°C/ W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(t°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
V
GS
= 0V
I
D
= 1mA
1.2
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
10
1
7
5
3
2
10
0
7 D=1
5
3 0.5
2
0.2
10
–1
7 0.1
5
3
2
1.0
0.8
P
DM
tw
T
0.6
0.4
–50
0
50
100
150
0.05
D= tw
0.02
T
0.01
Single Pulse
10
–2
10
–4
2 3 5710
–3
2 3 5710
–2
2 3 5710
–1
2 3 5710
0
2 3 5710
1
2 3 5710
2
PULSE WIDTH t
w
(s)
Feb.1999
CHANNEL TEMPERATURE Tch (°C)
RENESAS [ RENESAS TECHNOLOGY CORP ]
