FS70UM-2
Forward Transfer Admittance vs.
Drain Current (Typical)
Forward Transfer Admittance | yfs | (S)
10
2
7
5
4
3
2
10
1
7
5
4
3
2
10
0 0
10
2 3 4 5 7 10
1
2 3 4 5 7 10
2
T
C
= 25°C
75°C
125°C
Transfer Characteristics (Typical)
100
Drain Current I
D
(A)
80
Tc = 25°C
V
DS
= 10V
Pulse Test
V
DS
= 10V
Pulse Test
60
40
20
0
0
4
8
12
16
20
Gate-Source Voltage V
GS
(V)
Capacitance vs.
Drain-Source Voltage (Typical)
2
10
5
7
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
Drain Current I
D
(A)
Switching Characteristics (Typical)
10
3
7
5
4
3
2
10
2
7
5
4
3
2
t
d(on)
t
f
t
r
Capacitance C (pF)
Ciss
Switching Time (ns)
Tch = 25°C
f = 1MHz
V
GS
= 0V
t
d(off)
Coss
Crss
Tch = 25°C
V
DD
= 50V
V
GS
= 10V
RGEN = RGS = 50Ω
3
5 710
0
2 3
5 7 10
1
2 3 5 7 10
2
2 3
10
1 0
10
2 3 4 5 7 10
1
2 3 4 5 7 10
2
Drain-Source Voltage V
DS
(V)
Gate-Source Voltage vs.
Gate Charge (Typical)
20
100
Drain Current I
D
(A)
Source-Drain Diode Forward
Characteristics (Typical)
V
GS
= 0V
Pulse Test
Gate-Source Voltage V
GS
(V)
16
Source Current I
S
(A)
Tch = 25°C
I
D
= 70A
80
12
V
DS
= 20V
60
Tc = 125°C
8
50V
80V
40
75°C
25°C
4
20
0
0
40
80
120
160
200
0
0
0.4
0.8
1.2
1.6
2.0
Gate Charge Qg (nC)
Source-Drain Voltage V
SD
(V)
Rev.2.00
Aug 07, 2006
page 4 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
