Renesas LSIs
M5M29GB/T320VP-80
33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
DESCRIPTION
The Mobile FLASH M5M29GB/T320VP are 3.3V-only high speed 33,554,432-bit CMOS boot block Flash Memories with alternating BGO
(Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in one bank while
the device simultaneously allows Read operations to be performed on the other bank. This BGO feature is suitable for mobile and personal
computing, and communication products. The M5M29GB/T320VP are fabricated by CMOS technology for the peripheral circuits and
DINOR(Divided bit line NOR) architecture for the memory cells, and are available in 48pin TSOP(I) .
FEATURES
Organization
.................................
2,097,152 word x 16bit
.................................
4,194,304 word x 8 bit
Boot Block
M5M29GB320VP
M5M29GT320VP
........................
Bottom Boot
........................
Top Boot
Supply voltage
................................
..............................
V
CC
= 2.7 ~ 3.6V
Access time
90ns (Vcc=2.7~3.6V)
Power Dissipation
.................................
72 mW (Max. at 5MHz)
Read
(After Automatic Power saving)
..........
0.33µW (typ.)
Program/Erase
.................................
126mW (Max.)
.................................
0.33µW (typ.)
Standby
Deep power down mode
.......................
0.33µW (typ.)
Auto program for Bank(I) and Bank(II)
Program Time
.................................
4ms (typ.)
Program Unit
(Byte Program)
.........................
1word/1byte
(Page Program)
.........................
128word/256byte
Auto program for Bank(III) and Bank(IV)
Program Time
.................................
4ms (typ.)
.................................
128word/256byte
Program Unit
Auto Erase
.................................
40 ms (typ.)
Erase time
Erase Unit
Bank(I) Boot Block
.....................
4Kword/8Kbyte x 2
Parameter Block
..............
4Kword/8Kbyte x 6
Main Block
......................
32Kword/64Kbyte x 7
Bank(II) Main Block
......................
32Kword/64Kbyte x 8
Bank(III) Main Block
......................
32Kword/64Kbyte x 24
Bank(IV) Main Block
......................
32Kword/64Kbyte x 24
Program/Erase cycles
.........................................
100Kcycles
..............................
80ns (Vcc=3.0~3.6V)
Other Functions
Soft Ware Command Control
Selective Block Lock
Status Register Read
Alternating Back Ground Program/Erase Operation
Between Bank(I) ,Bank(II),Bank(III) and Bank(IV)
Package
48-Lead, 12mm x 20mm TSOP (type-I)
APPLICATION
Code Strage
Digital Cellular Phone
Telecommunication
Mobile Computing Machine
PDA (Personal Digital Assistance)
Car Navigation System
Video Game Machine
PIN CONFIGURATION (TOP VIEW)
320VP
A
15
A
14
A
13
A
12
A
11
A
10
A
9
A
8
A
19
A
20
WE#
RP#
NC
WP#
RY/BY#
A
18
A
17
A
7
A
6
A
5
A
4
A
3
A
2
A
1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
320VP
A
16
BYTE#
GND
DQ
15
/A-1
DQ
7
DQ
14
DQ
6
DQ
13
DQ
5
DQ
12
DQ
4
V
CC
DQ
11
DQ
3
DQ
10
DQ
2
DQ
9
DQ
1
DQ
8
DQ
0
OE#
GND
CE#
A
0
M5M29GB/T
320VP
37
36
35
34
33
32
31
30
29
28
27
26
25
NC : NO CONNECTION
Outline 48pin TSOP type-I (12 X 20mm)
VP(Normal bend)
1
48P3E-C
Rev3.0_48a_bazz
RENESAS [ RENESAS TECHNOLOGY CORP ]
