M66288FP
Description
262144-word x 8-bit x 3-FIFO MEMORY
REJ03F0156-0310
Rev. 03.10
Apr.4.2008
The M66288FP is a high-speed field memory with three FIFO (First In First Out) memories of 262144-word x 8-bit
configuration (2M-bit), which uses high-performance silicon gate CMOS process technology. One of three FIFO memories
consists of two FIFO memories of 262144-word x 4-bit (1M-bit). Eight types of operation can be performed by mode
settings.
Features
Memory configuration
High - speed cycle
High - speed access
Output hold
Supply voltage
Variable length delay bit
Eight modes can be selected
Write and Read function can be operated completely independently and asynchronously
Output type
3 state output
Package
100pin 14x14mm body LQFP (PLQP0100KB-A, 100P6Q-A)
Total memory capacity is 6M-bit (static memory).
Eight types of memory configurations can be selected.
12.5 ns (Min.) fmax 80MHz
9.0 ns (Max.)
2.0 ns (Min.)
Internal = 1.8 V ± 0.18 V, I/O = 3.3 V ± 0.3 V
Application
W-CDMA base station, Digital PPC, Digital television, VTR and so on.
Pin Configuration (Top view)
MODE1
MODE2
MODE3
RRESC
RRESB
RRESA
VccIO
VccIO
RCKC
RCKB
RCKA
GND
GND
GND
REC
QB7
QB6
QB5
QB4
QB3
QB2
QB1
52
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
VccIO
GND
Vcc18
QA0
QA1
QA2
QA3
QA4
QA5
QA6
QA7
GND
VccIO
DA0
DA1
DA2
DA3
DA4
DA5
DA6
DA7
GND
Vcc18
TEST1
TEST2
51
QB0
REB
REA
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
1
2
3
4
5
6
7
8
9
50
49
48
47
46
45
44
43
42
41
40
39
GND
Vcc18
GND
VccIO
QC7
QC6
QC5
QC4
QC3
QC2
QC1
QC0
GND
VccIO
DC7
DC6
DC5
DC4
DC3
DC2
DC1
DC0
GND
Vcc18
GND
M66288FP
38
37
36
35
34
33
32
31
30
29
28
27
26
WCKB
WRESB
WCKA
WRESA
WEB
WEA
WCKC
WRESC
VccIO
VccIO
WEC
TEST3
Vcc18
REJ03F0156-0310 Rev.3.10 Apr.04.2008
Page 1 of 23
VccIO
GND
GND
GND
DB0
DB1
DB2
DB3
DB4
DB5
DB6
DB7
RENESAS [ RENESAS TECHNOLOGY CORP ]
