R2J20602NP
Integrated Driver – MOS FET (DrMOS)
REJ03G1480-0300
Rev.3.00
Jun 30, 2008
Description
The R2J20602NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in
a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this
device suitable for large-current buck converters. The chip also incorporates a high-side bootstrap Schottky barrier
diode (SBD), eliminating the need for an external SBD for this purpose.
Integrating a driver and both high-side and low-side power MOS FETs, the new device is also compliant with the
package standard “Integrated Driver – MOS FET (DrMOS)” proposed by Intel Corporation.
Features
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Built-in power MOS FET suitable for applications with 12 V input and low output voltage
Built-in driver circuit which matches the power MOS FET
Built-in tri-state input function which can support a number of PWM controllers
VIN operating-voltage range: 16 V max
High-frequency operation (above 1 MHz) possible
Large average output current (Max. 40 A)
Achieve low power dissipation (About 4.4 W at 1 MHz, 25 A)
Controllable driver: Remote on/off
Built-in Schottky diode for bootstrapping
Low-side drive voltage can be independently set
Small package: QFN56 (8 mm
×
8 mm
×
0.95 mm)
Terminal Pb-free
Outline
VCIN
BOOT
GH
VIN
56
Driver
Tab
Reg5V
VSWH
Low-side MOS Tab
PWM
43
28
High-side MOS
Tab
1
14
15
DISBL#
MOS FET Driver
CGND VLDRV
GL
PGND
42
29
(Bottom view)
QFN56 package 8 mm
×
8 mm
REJ03G1480-0300 Rev.3.00 Jun 30, 2008
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RENESAS [ RENESAS TECHNOLOGY CORP ]
