Preliminary
Datasheet
RJH60D5BDPQ-E0
600V - 37A - IGBT
Application: Inverter
Features
•
Short circuit withstand time (5
μs
typ.)
•
Low collector to emitter saturation voltage
V
CE(sat)
= 1.6 V typ. (at I
C
= 37 A, V
GE
= 15 V, Ta = 25°C)
•
Built in fast recovery diode (25 ns typ.) in one package
•
Trench gate and thin wafer technology
•
High speed switching
t
f
= 50 ns typ. (at V
CC
= 300 V, V
GE
= 15 V, I
C
= 37 A, Rg = 5
Ω,
Ta = 25°C, inductive load)
R07DS0794EJ0300
Rev.3.00
May 23, 2013
Outline
RENESAS Package code: PRSS0003ZE-A
(Package name: TO-247)
C
4
G
1. Gate
2. Collector
3. Emitter
4. Collector
E
1 2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW
≤
10
μs,
duty cycle
≤
1%
2. Value at Tc = 25°C
Symbol
V
CES
/ V
R
V
GES
I
C
I
C
ic(peak)
Note1
I
DF
i
DF
(peak)
Note1
Note2
P
C
θj-c
Note2
θj-cd
Note2
Tj
Tstg
Ratings
600
±30
75
37
150
30
120
200
0.63
1.1
150
–55 to +150
Unit
V
V
A
A
A
A
A
W
°C/ W
°C/ W
°C
°C
R07DS0794EJ0300 Rev.3.00
May 23, 2013
Page 1 of 9
RENESAS [ RENESAS TECHNOLOGY CORP ]
