Preliminary
RJH60D2DPP-M0
Silicon N Channel IGBT
Application: Inverter
Features
•
High breakdown-voltage
•
Low on-voltage
•
Built-in diode
REJ03G1841-0100
Rev.1.00
Oct 14, 2009
Outline
RENESAS Package code: PRSS0003AF-A
(Package name: TO-220FL)
C
G
1. Gate
2. Collector
3. Emitter
1
2 3
E
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Symbol
V
CES
/ V
R
V
GES
I
C
I
C
ic(peak)
Note1
i
DF
i
DF
(peak)
Note1
P
C Note2
θj-c
Note2
Tj
Tstg
Ratings
600
±30
20
10
40
10
40
22.5
5.5
150
–55 to +150
Unit
V
V
A
A
A
A
A
W
°C/ W
°C
°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. PW
≤
10
μs,
duty cycle
≤
1%
2. Value at Tc = 25°C
REJ03G1841-0100 Rev.1.00 Oct 14, 2009
Page 1 of 3
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