Preliminary
RJH60F4DPK
Silicon N Channel IGBT
High Speed Power Switching
Features
•
High speed switching
•
Low on-state voltage
•
Fast recovery diode
REJ03G1835-0100
Rev.1.00
Oct 13, 2009
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
C
4
G
1. Gate
2. Collector
3. Emitter
4. Collector (Flange)
E
1
2
3
Absolute Maximum Ratings
(Tc = 25°C)
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Symbol
V
CES
V
GES
I
C
I
C Note1
ic(peak)
Note1
i
DF
(peak)
Note2
P
C
θj-c
Tj
Tstg
Note1
Ratings
600
±30
60
30
120
100
235.8
0.53
150
–55 to +150
Unit
V
V
A
A
A
A
W
°C/W
°C
°C
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW
≤
5
μs,
duty cycle
≤
1%
REJ03G1835-0100 Rev.1.00 Oct 13, 2009
Page 1 of 6
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