Preliminary
Datasheet
RJK03E3DNS
Silicon N Channel Power MOS FET
Power Switching
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
= 9.0 m
typ. (at V
GS
= 10 V)
Pb-free
Halogen-free
REJ03G1905-0200
Rev.2.00
Apr 06, 2010
Outline
RENESAS Package code: PWSN0008JB-A
(Package name: HWSON-8)
5 6 7 8
D D D D
5 6 7 8
4
G
4 3 2 1
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tch = 25C, Rg
50
3. Tc = 25C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
I
AP Note 2
E
AR Note 2
Pch
Note3
ch-c
Note3
Tch
Tstg
Ratings
30
±20
14
56
14
6.5
4.23
10
12.5
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
REJ03G1905-0200 Rev.2.00
Apr 06, 2010
Page 1 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
