RJK0349DSP
Silicon N Channel Power MOS FET
Power Switching
REJ03G1659-0300
Rev.3.00
Jul 10, 2008
Features
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
= 2.9 m
Ω
typ. (at V
GS
= 10 V)
•
Pb-free
•
•
•
•
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8<FP-8DAV>)
87
65
5 6 7 8
D D D D
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
3
12
4
4
G
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to ambient thermal impedance
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
I
AP Note 2
E
AR Note 2
Pch
Note3
θch-a
Note3
Tch
Tstg
Note1
Ratings
30
±20
20
160
20
20
40
2.5
50
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at Tch = 25°C, Rg
≥
50
Ω
3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
≤
10s
REJ03G1659-0300 Rev.3.00 Jul 10, 2008
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