Preliminary
Datasheet
RJK0601DPN-E0
N-Channel MOS FET
60 V, 110 A, 3.1 m
Features
High speed switching
Low drive current
Low on-resistance R
DS(on)
= 2.5 m typ. (at V
GS
= 10 V)
Package TO-220AB
R07DS0652EJ0200
Rev.2.00
Aug 24, 2012
Outline
RENESAS Package code: PRSS0004AG-A
(Package name: TO-220AB)
4
2, 4
D
1G
1
1. Gate
2. Drain
3. Source
4. Drain
S
3
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)
I
DR
Note2
I
AP
Note2
E
AS
Pch
Note3
ch-c
Tch
Tstg
Note1
Ratings
60
±20
110
330
110
55
227
200
0.63
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at L = 100
H,
Tch = 25C, Rg
50,
3. Tc = 25C
R07DS0652EJ0200 Rev.2.00
Aug 24, 2012
Page 1 of 6
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