Preliminary
Datasheet
RJK0628JPE
Silicon N Channel MOS FET
High Speed Power Switching
Features
•
•
•
•
•
For Automotive application
AEC-Q101 compliant
Low on-resistance : R
DS(on)
= 2.6 mΩ typ.
Capable of 4.5 V gate drive
Low input capacitance : Ciss = 5400 pF typ
R07DS0336EJ0100
Rev.1.00
Apr 18, 2011
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
4
2, 4
D
1
2
1G
3
1.
2.
3.
4.
Gate
Drain
Source
Drain
S
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
μs,
duty cycle
≤
1%
2. Tch = 25°C, Rg
≥
50
Ω
3. Tc = 25°C
4. AEC-Q101 compliant
Symbol
V
DSS
V
GSS
I
D
I
D
(pulse)
Note
1
I
DR
Note
3
I
DR
(pulse)
Note
1
I
AP
Note
2
E
AR
Note
2
Pch
Note
3
Tch
Note
4
Tstg
Value
60
+20 / –5
160
640
160
640
65
362
192
175
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
°C
°C
Thermal Impedance Characteristics
•
Channel to case thermal impedance
θch-c:
0.781°C/W
R07DS0336EJ0100 Rev.1.00
Apr 18, 2011
Page 1 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
