RJP4003ANS
Application Example
V
CM
Trigger Transformer
Xe Tube
C
M
+
–
8
7
6
5
IGBT driver
RD5CYD08
RD5CYDT08
1
2
3
4
V
CM
I
CP
C
M
V
GE
Recommended Operation Maximum Operation
Conditions
Conditions
330 V
350 V
130 A
330
µF
5V
150 A
400
µF
4V
Precautions on Usage
1. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the
device from electrostatic charge.
2. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And
turn-off dv/dt must become less than 400 V/
µs.
In general, when R
G (off)
= 68
Ω,
it is satisfied.
3. The ground of the drive signal must be connected to pin 3 only. If the emitter terminal pins 1 and 2 in which a large
currents flow are given to the device as the drive signal emitter, the device may be damaged due to large currents
since the specified gate voltage is not applied to the IGBT within the device.
4. The operation life should be endured until repeated discharge of 5,000 times under the charge current (I
Xe
≤
150 A :
full luminescence condition) of main capacitor (C
M
= 400
µF).
Repetition period under full luminescence
condition is over 3 seconds.
5. Total operation hours applied to the gate-emitter voltage must be within 5,000 hours when V
GE
is driven at 6 V.
Rev.1.00
Oct 13, 2006
page 3 of 4
RENESAS [ RENESAS TECHNOLOGY CORP ]
