RQA0005QXDQS
Silicon N-Channel MOS FET
REJ03G1325-0100
Rev.1.00
Oct 16, 2006
Features
•
High Output Power, High Gain, High Efficiency
Pout = +33 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz)
•
Compact package capable of surface mounting
Outline
RENESAS Package code: PLZZ0004CA-A
R
(Package Name : UPAK )
3
3
2
1
1
1. Gate
2. Source
3. Drain
4. Source
4
2, 4
Note:
Marking is “QX”.
*UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Channel dissipation
Channel temperature
Storage temperature
Note1: Value at Tc = 25°C
Symbol
V
DSS
V
GSS
I
D
Pch
note1
Tch
Tstg
Ratings
16
±5
0.8
9
150
–55 to +150
Unit
V
V
A
W
°C
°C
This Device is sensitive to Electro Static Discharge. An Adequate careful handling procedure is requested.
Rev.1.00 Oct 16, 2006 page 1 of 12
RENESAS [ RENESAS TECHNOLOGY CORP ]
