RQJ0303PGDQA
Silicon P Channel MOS FET
Power Switching
REJ03G1272-0400
Rev.4.00
May 26, 2006
Features
•
Low on-resistance
R
DS(on)
= 54 mΩ typ (V
GS
= –10 V, I
D
= –1.6 A)
•
Low drive current
•
High speed switching
•
4.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
D
3
1
2
2
G
1. Source
2. Gate
3. Drain
S
1
Note:
Marking is “PG”.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
V
DSS
Gate to source voltage
V
GSS
Drain current
I
D
Note1
Drain peak current
I
D(Pulse)
Body - drain diode reverse drain current
I
DR
Channel dissipation
Pch
Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. When using the glass epoxy board (FR-4: 40
×
40
×
1 mm)
Ratings
–30
+10 / –20
–3.3
–5
–3.3
0.8
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
Rev.4.00, May 26, 2006, page 1 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
