RQK0608BQDQS
Silicon N Channel MOS FET
Power Switching
REJ03G1621-0100
Rev.1.00
Mar 03, 2008
Features
•
Low on-resistance
R
DS(on)
= 120 mΩ typ.(at V
GS
= 4.5 V, I
D
= 1.6 A)
•
Low drive current
•
High speed switching
•
V
DSS
: 60 V and capable of 2.5 V gate drive
Outline
RENESAS package code: PLZZ0004CA-A
(Package name: UPAK
R
)
2, 4
D
2
3
1G
4
S
3
1
1. Gate
2. Drain
3. Source
4. Drain
Note:
Marking is “BQ“.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
D(pulse) Note1
I
DR
Pch
Note2
Tch
Tstg
Ratings
60
±12
3.2
10
3.2
1.5
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
Notes: 1. PW
≤
10
µs,
Duty cycle
≤
1%
2. When using the glass epoxy board (FR-4 40
×
40
×
1 mm)
REJ03G1621-0100 Rev.1.00 Mar 03, 2008
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