RQM2201DNS
Silicon N Channel MOS FET
Power Switching
REJ03G1492-0200
Rev.2.00
Apr 16, 2007
Features
•
•
•
•
•
Small, thin and leadless type package (3
×
3 mm, t = 0.8 mm max.)
Two FET chips are mounted in one package
High density mounting
High speed switching. (Ciss = 200 pF typ)
V
DSS
≥
60 V and capable of 2.5 V gate drive
Outline
RENESAS Package code: PWSN0006ZA-A
(Package name: WSON0303-6 <HWSON-6>)
FET No.1
(Nch)
6
D
FET No.2
(Nch)
5
D
4
G
5
6
2
G
1
4
4
3 2
1
(Bottom view)
S
1
S
3
1, 3: Source
2, 4: Gate
5, 6: Drain
Notes:
1. Marking is “M2201“.
2. The following maximum ratings and electric characteristics are applied to both FET1 and
FET2.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
D(pulse) Note1
I
DR
Pch
Note2
Pch
Note3
Tch
Tstg
Ratings
60
±12
2
8
2
1
1.5
150
–55 to +150
Unit
V
V
A
A
A
W
W
°C
°C
Notes: 1. PW
≤
10
µs,
Duty cycle
≤
1%
2. 1 Drive operation: When using the glass epoxy board (FR-4 40
×
40
×
1 mm)
3. 2 Drive operation: When using the glass epoxy board (FR-4 40
×
40
×
1 mm)
REJ03G1492-0200 Rev.2.00 Apr 16, 2007
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RENESAS [ RENESAS TECHNOLOGY CORP ]
