PRELIMINARY DATA SHEET
SILICON TRANSISTOR
µ
PA810T
HIGH-FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 6-PIN 2
×
2SC4226) SMALL MINI MOLD
The
µ
PA810T has built-in 2 low-voltage transistors which are designed to
amplify low noise in the VHF band to the UHF band.
PACKAGE DRAWINGS
(Unit: mm)
2.1±0.1
1.25±0.1
FEATURES
• Low Noise
NF = 1.2 dB TYP. @ f = 1 GHz, V
CE
= 3 V, I
C
= 7 mA
0.65 0.65
2.0±0.2
|S
21e
|
2
= 9.0 dB TYP. @ f = 1 GHz, V
CE
= 3 V, I
C
= 7 mA
• A Small Mini Mold Package Adopted
• Built-in 2 Transistors (2
×
2SC4226)
1.3
2
3
ORDERING INFORMATION
0.9±0.1
PART NUMBER
QUANTITY
Loose products
(50 PCS)
PACKING STYLE
Embossed tape 8 mm wide. Pin 6 (Q1
Base), Pin 5 (Q1 Emitter), Pin 4 (Q2 Emitter)
face to perforation side of the tape.
µ
PA810T-T1
Taping products
(3 KPCS/Reel)
Remark
If you require an evaluation sample, please contact an NEC Sales
Representative. (Unit sample quantity is 50 pcs.)
PIN CONFIGURATION (Top View)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
T
RATING
20
12
3
100
150 in 1 element
200 in 2 elements
Note
150
–65 to +150
UNIT
V
6
Q
1
1
V
V
mA
mW
5
0 to 0.1
4
Q
2
2
3
PIN CONNECTIONS
4. Emitter (Q2)
1. Collector (Q1)
5. Emitter (Q1)
2. Base (Q2)
6. Base (Q1)
3. Collector (Q2)
Junction Temperature
Storage Temperature
T
j
T
stg
˚C
˚C
Note
110 mW must not be exceeded in 1 element.
The information in this document is subject to change without notice.
Document No. P11463EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
©
0.15
–0
+0.1
µ
PA810T
0.7
4
5
0.2
–0
1
6
• High Gain
+0.1
XY
1996
RENESAS [ RENESAS TECHNOLOGY CORP ]
