RF3933
Absolute Maximum Ratings
Parameter
Drain Voltage (V
D
)
Gate Voltage (V
G
)
Gate Current (I
G
)
Operational Voltage
Ruggedness (VSWR)
Storage Temperature Range
Operating Temperature Range (T
C
)
Operating Junction Temperature (T
J
)
Human Body Model
MTTF (T
J
< 200 °C, 95% Confidence
Limits)*
Thermal Resistance, R
TH
(junction
to case) measured at
T
C
= 85°C, DC bias only
Rating
150
-8 to +2
54
65
10:1
-55 to +125
-40 to +85
200
Class 1A
3 x 10
6
2.1
Unit
V
V
mA
V
°C
°C
°C
Hours
°C/W
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
* MTTF - median time to failure for wear-out failure mode (30% I
DSS
degradation) which is determined by the technology process reliability.
Refer to product qualification report for FIT(random) failure rate.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage
and current must not exceed the maximum operating values.
Bias Conditions should also satisfy the following expression: P
DISS
<(T
J
- T
C
)/R
TH J-C
and T
C
= T
CASE
Parameter
Drain Voltage (V
DSQ
)
Gate Voltage (V
GSQ
)
Drain Bias Current
Frequency of Operation
Min.
28
-4.5
DC
Specification
Typ.
Max.
48
Unit
V
V
mA
MHz
pF
pF
pF
Condition
Recommended Operating Conditions
-3.7
300
3500
7
30
21
2
2.5
-4.2
0.25
-2.5
Capacitance
C
RSS
C
ISS
C
OSS
V
G
= -8V, V
D
= 0V
DC Functional Test
I
G (OFF)
– Gate Leakage
I
D (OFF)
– Drain Leakage
V
GS (TH)
– Threshold Voltage
V
DS (ON)
– Drain Voltage at High
Current
mA
mA
V
V
V
G
= -8V, V
D
= 0V
V
G
= -8V, V
D
= 48V
V
D
= 48V, I
D
= 20mA
V
G
= 0V, I
D
= .5A
[1], [2]
-3.4
10
55
-10
12
60
-12
V
dB
%
dB
V
D
= 48V, I
D
=300mA
CW, P
OUT
= 49.5dBm, f = 2140MHz
CW, P
OUT
= 49.5dBm, f = 2140MHz
CW, P
OUT
= 49.5dBm, f = 2140MHz
RF Functional Test
V
GS (Q)
Gain
Drain Efficiency
Input Return Loss
2 of 14
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DS120306
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