FPD22501.5W
Power pHEMT
FPD2250
1.5W POWER pHEMT
Package Style: Bare Die
Product Description
The FPD2250 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transis-
tor (pHEMT), featuring a 0.25μmx2250μm Schottky barrier gate, defined by high-
resolution stepper-based photolithography. The recessed gate structure minimizes
parasitics to optimize performance. The epitaxial structure and processing have
been optimized for reliable high-power applications. The FPD2250 is also available
in the low-cost plastic SOT89 package.
Features
32dBm Linear Output Power
at 12GHz
7.5dB Power Gain at 12GHz
42dBm O
IP3
45% Power-Added Efficiency
Applications
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Narrowband and Broadband
High-Performance Amplifiers
SATCOM Uplink Transmitters
PCS/Cellular Low-Voltage
High-Efficiency Output Ampli-
fiers
Medium-Haul Digital Radio
Transmitters
Parameter
Electrical Specifications
P
1dB
Gain Compression
Maximum Stable Gain (S21/S12)
Power Gain at P
1dB
(G
1dB
)
Power-Added Efficiency (PAE)
OIP
3
Saturated Drain-Source Current (I
DSS
)
Maximum Drain-Source Current
(I
MAX
)
Transconductance (G
M
)
Gate-Source Leakage Current (I
GSO
)
Pinch-Off Voltage (V
P
)
Gate-Source Breakdown Voltage
(V
BDGS
)
Gate-Drain Breakdown Voltage
(V
BDGD
)
Thermal Resistivity (θJC)
Min.
31.0
8.0
6.5
Specification
Typ.
32.0
9.0
7.5
45
40
42
Max.
Unit
dBm
dB
dB
%
dBm
dBm
Condition
V
DS
=8V, I
DS
=50% I
DSS
V
DS
=8V, I
DS
=50% I
DSS
V
DS
=8V, I
DS
=50% I
DSS
V
DS
=8V, I
DS
=50% I
DSS
, P
OUT
=P
1dB
V
DS
=8V, I
DS
=50% I
DSS
Matched for optimal power, tuned for best IP
3
V
DS
=1.3V, V
GS
=0V
V
DS
=1.3V, V
GS
≈+1V
V
DS
=1.3V, V
GS
=0V
V
GS
=-5V
V
DS
=1.3V, I
DS
=2.25mA
I
GS
=2.25mA
I
GD
=2.25mA
V
DS
>6V
560
700
1125
600
10
|1.0|
825
mA
mA
ms
μA
V
V
V
°C/W
|12.0|
|14.5|
|14.0|
|16.0|
30
Note: T
AMBIENT
=22°C, RF specifications measured at f=12GHz using CW signal.
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Rev A1 DS090612
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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