RF2132
2
Typical Applications
• 4.8V AMPS Cellular Handsets
• 4.8V CDMA/AMPS Handsets
• 4.8V JCDMA/TACS Handsets
• Driver Amplifier in Cellular Base Stations
• Portable Battery-Powered Equipment
LINEAR POWER AMPLIFIER
2
POWER AMPLIFIERS
Product Description
The RF2132 is a high power, high efficiency linear ampli-
fier IC. The device is manufactured on an advanced Gal-
lium Arsenide Heterojunction Bipolar Transistor (HBT)
process, and has been designed for use as the final RF
amplifier in dual-mode 4-cell CDMA/AMPS handheld digi-
tal cellular equipment, spread-spectrum systems, and
other applications in the 800MHz to 950MHz band. The
device is self-contained with 50Ω input and the output
can be easily matched to obtain optimum power, effi-
ciency, and linearity characteristics over varying supply
and control voltages.
0.158
0.150
0.021
0.014
-A-
0.009
0.004
0.392
0.386
0.069
0.064
0.050
0.244
0.230
8° MAX
0° MIN
0.010
0.008
0.060
0.054
0.035
0.016
Optimum Technology Matching® Applied
Si BJT
Si Bi-CMOS
ü
GaAs HBT
SiGe HBT
Package Style: Standard Batwing
GaAs MESFET
Si CMOS
Features
• Single 4.2V to 5.0V Supply
• Up to 29 dBm Linear Output Power
• 29dB Gain With Analog Gain Control
• 45% Linear Efficiency
• On-board Power Down Mode
• 800MHz to 950MHz Operation
VCC 1
NC 2
RF IN 3
GND 4
GND 5
GND 6
GND 7
PC 8
16 GND
15 RF OUT
14 RF OUT
13 GND
12 GND
11 RF OUT
10 RF OUT
9 GND
BIAS
Ordering Information
RF2132
RF2132 PCBA
Linear Power Amplifier
Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev B9 010417
2-109
RFMD [ RF MICRO DEVICES ]
