RF2312
Absolute Maximum Ratings
Parameter
Input RF Power
Output Load VSWR
Ambient Operating Temperature
Storage Temperature
Rating
+18
20:1
-40 to +85
-40 to +150
Unit
dBm
°C
°C
Caution!
ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. RoHS marking based on EUDirective2002/95/EC
(at time of this printing). However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Parameter
Overall (50Ω)
Frequency Range
Gain
Noise Figure
Input VSWR
Specification
Min.
Typ.
Max.
Unit
Condition
T=25°C, V
CC
=9V, Freq = 900 MHz,
R
C
=30Ω, 50Ω System, P
IN
=-4dBm
3dB Bandwidth
From 50MHz to 300MHz, -30 to +70 °C
From 300MHz to 1000MHz, -30 to +70 °C
Appropriate values for the DC blocking
capacitors and bias inductor are required to
maintain this VSWR at the intended operat-
ing frequency range.
Appropriate values for the DC blocking
capacitors and bias inductor are required to
maintain this VSWR at the intended operat-
ing frequency range.
At 100MHz
At 500MHz
At 900MHz
At 100MHz
At 500MHz
At 900MHz
At 100MHz
At 500MHz
At 900MHz
14.5
DC to 2500
15.1
3.8
4.2
1.7:1
4.3
4.8
2:1
MHz
dB
dB
dB
Output VSWR
1.4:1
2:1
Output IP
3
Output IP
3
Output IP
3
Output P
1dB
Output P
1dB
Output P
1dB
Saturated Output Power
Saturated Output Power
Saturated Output Power
Reverse Isolation
+40
+33
+30
+21
+20
+17
+42
+36
+33
+22
+21
+18.5
+23
+22.5
+20.5
20
114.9
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
°C/W
Thermal
Theta
JC
I
CC
=100mA, P
DISS
=0.555W, T
AMB
=85°C,
T
J
=149°C
No RF Input/Output
T
AMB
=+85°C
I
CC
=120mA, P
DISS
=0.702W, T
AMB
=85°C,
T
J
=165°C
No RF Input/Output
T
AMB
=+85°C
On pin 8, I
CC
=100mA
On pin 8, I
CC
=40mA
V
CC
=9.0V, R
C
=30Ω
Mean Time To Failure
Theta
JC
2170
114.05
years
°C/W
Mean Time To Failure
2170
5.5
5.0
100
years
V
V
mA
Power Supply
Device Voltage (V
D
)
Operating Current Range
40
120
3-2
Rev C6 051025