RT8009
Parameter
Symbol
ΔV
Test Conditions
Min
Typ
Max Units
V
= V
+ ΔV to 5.5V
OUT
(Note 5)
Output Voltage
Accuracy
IN
Adjustable
--
+3
%
−3
OUT
FB
0A < I
< 600mA
OUT
FB Input Current
--
0.3
0.4
0.25
0.35
--
50
0.65
0.80
0.55
0.65
1.8
--
nA
I
V
= V
−50
--
FB
IN
V
IN
V
IN
V
IN
V
IN
= 3.6V
Ω
Ω
R
R
of P-Channel MOSFET
of N-Channel MOSFET
R
R
I
= 200mA
= 200mA
DS (ON)
DS (ON)
DS (ON)_P OUT
--
= 2.5V
= 3.6V
= 2.5V
--
I
DS (ON)_N OUT
--
P-Channel Current Limit
EN High-Level Input Voltage
EN Low-Level Input Voltage
Undervoltage Lock Out threshold
Hysteresis
1
A
V
I
V
IN
V
IN
V
IN
= 2.5V to 5.5 V
= 2.5V to 5.5V
= 2.5V to 5.5V
LIM_P
1.5
--
--
V
EN_H
EN_L
--
0.4
--
V
V
--
1.8
0.1
1.25
160
50
V
--
--
V
Oscillator Frequency
Thermal Shutdown Temperature
Min. On Time
0.8
--
1.85
--
MHz
°C
ns
%
f
V
IN
= 3.6V, I
= 100mA
OSC
OUT
T
SD
--
--
Max. Duty Cycle
100
-1
--
--
LX Leakage Current
V
= 3.6V, V = 0V or V = 3.6V
--
1
μA
IN
LX
LX
Note 1. Stresses listed as the above “Absolute Maximum Ratings” may cause permanent damage to the device. These are for
stress ratings. Functional operation of the device at these or any other conditions beyond those indicated in the
operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended
periods may remain possibility to affect device reliability.
Note 2. Devices are ESD sensitive. Handling precaution recommended.
Note 3. The device is not guaranteed to function outside its operating conditions.
Note 4. θJA is measured in the natural convection at TA = 25°C on a low effective thermal conductivity test board of
JEDEC 51-3 thermal measurement standard.
Note 5. ΔV = IOUT x RDS(ON)_P
DS8009-03 March 2007
www.richtek.com
5