Absolute Maximum Ratings (T = 25°C Unless otherwise specified.)
A
Symbol
Parameter
Device
Value
Units
°C
TOTAL DEVICE
T
Storage Temperature
Non M
M
-55 to +150
-40 to +150
-55 to +100
-40 to +100
260 for 10 sec
250
STG
T
Operating Temperature
Lead Solder Temperature
Non M
M
°C
OPR
T
All
°C
SOL
P
Total Device Power Dissipation @ T = 25°C
All
mW
D
A
Derate above 25°C
3.3
mW/°C
EMITTER
I
Continuous Forward Current
Reverse Voltage
All
All
All
All
80
3
mA
V
F
V
R
I (pk)
Forward Current – Peak (300µs, 2% Duty Cycle)
3.0
150
2.0
A
F
P
LED Power Dissipation @ T = 25°C
mW
mW/°C
D
A
Derate above 25°C
DETECTOR
BV
BV
BV
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
All
All
All
All
30
30
V
V
CEO
CBO
ECO
5
V
P
Detector Power Dissipation @ T = 25°C
150
2.0
150
mW
mW/°C
mA
D
A
Derate above 25°C
I
Continuous Collector Current
All
C
©2006 Fairchild Semiconductor Corporation
4N29, 4N30, 4N31, 4N32, 4N33 Rev. 1.0.1
www.fairchildsemi.com
2
ROCHESTER [ Rochester Electronics ]
