SST4403 / MMST4403 / 2N4403
Transistors
PNP Medium Power Transistor
(Switching)
SST4403 / MMST4403 / 2N4403
Features
1) BV
CEO
=
−40V
(Min.) ; at I
C
=
−1mA
2) Complements the SST4401 / MMST4401 / PN4401
External dimensions
(Unit : mm)
SST4403
(1)
2.9
±
0.2
1.9
±
0.2
0.95 0.95
(2)
0.95
+
0.2
−
0.1
0.45
±
0.1
2.4
±
0.2
0.2
1.3
+
0.1
−
0 to 0.1
0.2Min.
Package, marking, and packaging specifications
Part No.
Packaging type
Marking
Code
Basic ordering unit (pieces)
SST4403
SST3
R2X
T116
3000
MMST4403
SMT3
R2X
T146
3000
2N4403
TO-92
−
T93
3000
(1)
ROHM : SST3
(3)
All terminals have the same
dimensions
0.1
0.15
+
0.06
−
0.4
+
0.1
−
0.05
(1) Emitter
(2) Base
(3) Collector
MMST4403
2.9
±
0.2
1.9
±
0.2
0.95 0.95
(2)
1.1
+
0.2
−
0.1
0.8
±
0.1
+
0.2
1.6
−
0.1
2.8
±
0.2
0 to 0.1
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limits
−40
−40
−6
−0.6
0.2
P
C
0.35
0.625
150
−55
to +150
Unit
V
V
V
A
W
W
W
˚C
˚C
ROHM : SMT3
EIAJ : SC-59
2N4403
4.8
±
0.2
4.8
±
0.2
3.7
±
0.2
(12.7Min.)
Collector power
dissipation
SST4403
MMST4403
SST4403
MMST4403
2N4403
3Min.
0.3 to 0.6
(3)
All terminals have the same
dimensions
0.1
0.15
+
0.06
+
0.1
−
0.4
−
0.05
(1) Emitter
(2) Base
(3) Collector
ROHM : TO-92
EIAJ : SC-43
0.5
±
0.1
(1) (2) (3) 2.5
+
0.3
−
0.1
5
0.45
±
0.1
2.3
(1) Emitter
(2) Base
(3) Collector
Tj
Junction temperature
Tstg
Storage temperature
∗
Mounted on a 7
+
5
+
0.6mm CERAMIC SUBSTRATE
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
Min.
−40
−40
−5
−
−
−
−
−0.75
−
30
60
DC current transfer ratio
h
FE
100
100
20
Transition frequency
Collector output capacitance
Emitter input capacitance
Delay time
Rise time
Storage time
Fall time
f
T
Cob
Cib
td
tr
tstg
tf
200
−
−
−
−
−
−
Typ.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max.
−
−
−
−0.1
−0.1
−0.4
−0.75
−0.95
−1.3
−
−
−
300
−
−
8.5
30
15
20
225
30
−
Unit
V
V
V
µA
µA
V
V
I
C
=
−100µA
I
C
=
−1mA
I
E
=
−100µA
V
CB
=
−35V
V
EB
=
−5V
I
C
/I
B
=
−150mA/ −15mA
I
C
/I
B
=
−500mA/ −50mA
I
C
/I
B
=
−150mA/ −15mA
I
C
/I
B
=
−500mA/ −50mA
V
CE
=
−1V,
I
C
=
−0.1mA
V
CE
=
−1V,
I
C
=
−1mA
V
CE
=
−1V,
I
C
=
−10mA
V
CE
=
−1V,
I
C
=
−150mA
V
CE
=
−2V,
I
C
=
−500mA
MHz
pF
pF
ns
ns
ns
ns
V
CE
=
−10V,
I
E
=20mA,
f=100MHz
V
CB
=
−10V,
f=100kHz
V
EB
=
−0.5V,
f=100kHz
V
CC
=
−30V,
V
EB(OFF)
=
−2V,
I
C
=
−150mA,
I
B1
=
−15mA
V
CC
=
−30V,
V
EB(OFF)
=
−2V,
I
C
=
−150mA,
I
B1
=
−15mA
V
CC
=
−30V,
I
C
=
−150mA,
I
B1
=
−I
B2
=
−15mA
V
CC
=
−30V,
I
C
=
−150mA,
I
B1
=
−I
B2
=
−15mA
Conditions
Rev.B
1/3
ROHM [ ROHM ]
