2SK3018
Transistor
2.5V Drive Nch MOS FET
2SK3018
Structure
Silicon N-channel
MOSFET
External dimensions
(Unit : mm)
UMT3
2.0
0.3
0.2
0.9
0.7
Applications
Interfacing, switching (30V, 100mA)
(3)
1.25
(2)
(1)
2.1
0.65 0.65
1.3
0.15
Features
1) Low on-resistance.
2) Fast switching speed.
3) Low voltage drive (2.5V) makes this device ideal for
portable equipment.
4) Drive circuits can be simple.
5) Parallel use is easy.
(1) Source
(2) Gate
(3) Drain
Each lead has same dimensions
Abbreviated symbol : KN
Packaging specifications
Package
Type
Code
Basic ordering unit
(pieces)
2SK3018
Taping
T106
3000
Equivalent circuit
Drain
Gate
Absolute maximum ratings
(Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Total power dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
DP
∗
1
P
D
∗
2
Tch
Tstg
Limits
30
±20
±100
±400
200
150
−55
to
+150
Unit
V
V
mA
mA
mW
°C
°C
∗
Gate
Protection
Diode
0.1Min.
Source
∗
A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in use.
Use a protection circuit when the fixed voltages
are exceeded.
∗
1 Pw≤10µs, Duty cycle≤1%
∗
2 With each pin mounted on the recommended lands.
Thermal resistance
Parameter
Channel to ambient
∗
With each pin mounted on the recommended lands.
Symbol
Rth(ch-a)
∗
Limits
625
Unit
°C
/ W
Rev.B
1/3
ROHM [ ROHM ]
