UMA9N / FMA9A
Transistors
Digital transistor
(Common Emitter Dual Transistors)
UMA9N / FMA9N
!
Features
1) Two DTA114E chips in UMT and
SMT packages.
2) Mounting cost and area can be cut
in half.
!
External dimensions
(Units : mm)
UMA9N
2.0±0.2
1.3±0.1
0.65 0.65
FMA9A
2.9±0.2
0.9±0.1
0.7
(3)
1.25±0.1
1.9±0.2
0.95 0.95
1.1 +0.2
−0.1
0.8±0.1
(5)
1.6 +0.2
−0.1
(2)
(3)
(1)
2.1±0.1
(4)
2.8±0.2
0~0.1
(2)
(1)
0~0.1
!
Structure
Epitaxial planar type
PNP silicon transistor
(Built-in resistor type)
(4)
(5)
+0.1
0.2
−0.05
0.1Min.
0.15±0.05
All terminals have same
dimensions.
All terminals have same
dimensions.
ROHM : UMT5
EIAJ : SC-88A
ROHM : SMT5
EIAJ : SC-74A
(3)
R
1
DTr
2
R
2
(2)
R
2
(1)
R
1
DTr
1
(5)
R
1
= 10kΩ
(3)
R
1
DTr
2
(2)
R
2
(4)
R
2
(5)
R
1
DTr
1
(1)
The following characteristics apply to
both DTr
1
and DTr
2
.
(4)
R
2
= 10kΩ
Abbreviated symbol: A10
R
1
= 10kΩ
R
2
= 10kΩ
!
Absolute maximum ratings
(Ta = 25°C)
Parameter
Supply voltage
Input voltage
Symbol
V
CC
V
IN
I
O
Output current
Power
dissipation
UMA9N
FMA9A
Tj
Tstg
I
C (MAX.)
Pd
Limits
−50
−40
10
−50
−100
150 (TOTAL)
300 (TOTAL)
150
−50~+150
°C
°C
Unit
V
V
mA
mW
*
1
*
2
Junction temperature
Storage temperature
*
1 120mW per element must not be exceeded.
*
2 200mW per element must not be exceeded.
!
Electrical characteristics
(Ta = 25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
Symbol
V
I (off)
V
I (on)
V
O (on)
I
I
I
O (off)
G
I
f
T
R
1
R
2
/R
1
Min.
−
−3.0
−
−
−
30
−
7
0.8
Typ.
−
−
−0.1
−
−
−
250
10
1
Max.
−0.5
−
−0.3
−0.88
−0.5
−
−
13
1.2
Unit
V
V
mA
µA
−
MHz
kΩ
−
Conditions
V
CC
=
−5V,
I
O
=
−100µA
V
O
=
−0.3V,
I
O
=
−10mA
I
O
/I
I
=
−10mA
/
−0.5mA
V
I
=
−5V
V
CC
=
−50V,
V
I
=
0V
I
O
=
−5mA,
V
O
=
−5V
V
CE
=
−10mA,
I
E
=
5mA, f
=
100MHZ
−
−
*
*
Transition frequency of the device
0.3~0.6
0.3
+0.1
−0.05
0.15
+0.1
−0.06
ROHM [ ROHM ]
