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IMZ1AT108 参数 Datasheet PDF下载

IMZ1AT108图片预览
型号: IMZ1AT108
PDF下载: 下载PDF文件 查看货源
内容描述: 通用晶体管 [General purpose transistor]
分类和应用: 晶体晶体管
文件页数/大小: 5 页 / 88 K
品牌: ROHM [ ROHM ]
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EMZ1 / UMZ1N / IMZ1A
Transistors
General purpose transistor
(dual transistors)
EMZ1 / UMZ1N / IMZ1A
Features
1) Both a 2SA1037AK chip and 2SC2412K chip in a
EMT or UMT or SMT package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
External dimensions
(Unit : mm)
EMZ1
0.22
(4)
(5)
(6)
(3)
(2)
1.2
1.6
(1)
0.13
Each lead has same dimensions
ROHM : EMT6
Abbreviated symbol : Z1
Structure
NPN / PNP epitaxial planar silicon transistor
(4)
0.65
1.3
0.65
0.8
1.1
0.95 0.95
1.9
2.9
(3)
UMZ1N
0.2
0.5
0.5 0.5
1.0
1.6
(6)
1.25
2.1
0.1Min.
0to0.1
EMZ1 / UMZ1N
(3)
(2)
(1)
IMZ1A
(4)
(5)
(6)
Each lead has same dimensions
ROHM : UMT6
EIAJ : SC-88
Abbreviated symbol : Z1
Tr
1
Tr
2
Tr
1
Tr
2
IMZ1A
(4)
(5)
(6)
(3)
(2)
(1)
(6)
0.3
(4)
(5)
1.6
2.8
0.15
Absolute maximum ratings
(Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
EMZ1, UMZ1N
Power
dissipation IMZ1A
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
Tr
1
60
50
7
150
Tr
2
−60
−50
−6
−150
Unit
V
V
V
mA
mW
˚C
˚C
1
2
0.3to0.6
0to0.1
Each lead has same dimensions
ROHM : SMT6
EIAJ : SC-74
Abbreviated symbol : Z1
150 (TOTAL)
300 (TOTAL)
150
−55
to
+150
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
(3)
(2)
(1)
0.7
0.9
Equivalent circuit
0.15
(1)
2.0
(5)
(2)
Rev.A
1/4