MMSTA13
Transistors
NPN small signal transistor
MMSTA13
Features
1) High Current Gain.
Dimensions
(Unit : mm)
MMSTA13
2.9
1.1
0.4
(3)
Packaging specifications
Package
Type
MMSTA13
(1)Emitter
(2)Base
(3)Collector
0.8
Taping
T146
3000
(2)
(1)
Code
Basic ordering unit (pieces)
1.6
2.8
0.95 0.95
0.15
1.9
Each lead has same dimensions
Abbreviated symbol : R1M
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
EBO
I
C
P
C
Tj
Tstg
Limits
30
30
10
0.3
0.2
0.35
150
−55
to 125
Unit
V
V
V
A
W
W
∗
°C
°C
∗
Mounted on a 7
×
5
×
0.6 mm CERAMIC SUBSTRATE
Electrical characteristics
(Ta=25°C)
Parameter
Symbol
Min.
30
30
10
−
−
−
−
5000
DC current transfer ratio
Transition frequency
Collector output capacitance
h
FE
10000
f
T
Cob
125
−
Typ.
−
−
−
−
−
−
−
−
−
−
5.4
Max.
−
−
−
0.1
0.1
1.5
2.0
−
−
−
−
Unit
V
V
V
I
C
=
100
µ
A
I
C
=
10
µ
A
I
E
=
10
µ
A
V
CB
=
30V
V
EB
=
10V
I
C
/I
B
=
100mA/ 100
µ
A
V
CE
=
5V, I
C
=
100mA
∗
V
CE
=
5V, I
C
=
10mA
V
CE
=
5V, I
C
=
100mA
∗
V
CE
=
5V, I
E
= −10mA,
f=100MHz
V
CB
=
10V, f=100kHz, I
E
=
0
Conditions
Collector-emitter breakdown voltage BV
CES
Collector-emitter breakdown voltage BV
CEO
Emitter-base breakdown voltage
Collector-base cutoff current
Emitter-base cutoff current
Collector-emitter saturation voltage
Base-emitter voltage
BV
EBO
I
CBO
I
CEO
V
CE(sat)
V
BE(on)
µ
A
µ
A
V
V
−
MHz
pF
∗
Pulsed
0.3Min.
1/1
ROHM [ ROHM ]
