10V Drive Nch MOSFET
R5007ANJ
Structure
Silicon N-channel MOSFET
Dimensions
(Unit : mm)
LPTS
10.1
4.5
1.3
Features
1) Low on-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) Gate-source voltage (V
GSS
) guaranteed to be
±30V.
5) Drive circuits can be simple.
6) Parallel use is easy.
13.1
9.0
3.0
1.0
1.24
0.78
(3)
5.08
2.7
(1) Base (Gate)
(2) Collector (Drain)
(3) Emitter (Source)
(1)
(2)
Each lead has same dimensions
Applications
Switching
Inner circuit
∗1
Packaging specifications
Package
Code
Type
Basic ordering unit (pieces)
Taping
TL
1000
(1)
(1) Gate
(2) Drain
(3) Source
(2)
(3)
∗1
Body Diode
R5007ANJ
Absolute maximum ratings
(Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Avalanche Current
Avalanche Energy
Total power dissipation (Tc=25°C)
Channel temperature
Range of storage temperature
∗1
Pw≤10µs, Duty cycle≤1%
∗2
L 500µH, V
DD
=50V,
R
G
=25Ω,
Starting, Tch=25°C
∗3
Limited only by maximum tempterature allowed
Symbol
V
DSS
V
GSS
Continuous
Pulsed
Continuous
Pulsed
I
D
I
DP
I
S
I
SP
I
AS
E
AS
P
D
Tch
Tstg
∗3
∗1
∗3
∗1
∗2
∗2
Limits
500
±30
±7
±28
7
28
3.5
3.5
40
150
−55
to
+150
Unit
V
V
A
A
A
A
A
mJ
W
°C
°C
Thermal resistance
Parameter
Channel to case
Symbol
Rth(ch-c)
Limits
3.13
Unit
°C/W
www.rohm.com
c
○
2009 ROHM Co., Ltd. All rights reserved.
1.2
2.54
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2009.02 - Rev.A
ROHM [ ROHM ]
