Data Sheet
10V Drive Nch MOSFET
R6020FNX
Structure
Silicon N-channel MOSFET
Dimensions
(Unit : mm)
TO-220FM
10.0
φ
3.2
4.5
2.8
2) Low on-resistance.
3) Fast switching speed.
4) Gate-source voltage
V
GSS
garanteed to be ±30V .
5) Drive circuits can be simple.
6) Parallel use is easy.
14.0
2.5
Features
1) Fast reverse recovery time (t
rr
)
(1) Gate
(2) Drain
(3) Source
15.0
12.0
8.0
1.3
1.2
0.8
2.54
(1) (2) (3)
2.54
0.75
2.6
Application
Switching
Inner
circuit
Packaging
specifications
Type
R6020FNX
Package
Basic ordering unit (pieces)
Bulk
500
(1) Gate
(2) Drain
(3) Source
(1)
(2)
∗1
(3)
1
BODY DIODE
Absolute
maximum ratings
(Ta
�½
25°C)
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
V
DSS
V
GSS
I
D
I
DP
I
S
I
SP
I
AS
E
AS
P
D
T
ch
T
stg
*3
*1
*3
*1
*2
*2
Limits
600
30
20
80
20
80
10
26.7
50
150
55
to
150
Unit
V
V
A
A
A
A
A
mJ
W
C
C
Avalanche Current
Avalanche Energy
Power dissipation (Tc=25C)
Channel temperature
Range of storage temperature
*1 Pw10s, Duty cycle1%
*2 L≒500μH, V
DD
=50V, R
G
=25Ω, starting Tch=25°C
*3 Limited only by maximum temperature allowed.
Thermal resistance
Parameter
Channel to Case
Symbol
R
th (ch-c)
Limits
2.5
Unit
C
/ W
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2011.10 - Rev.A
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