Data Sheet
10V Drive Nch MOSFET
R8002ANX
Structure
Silicon N-channel MOSFET
Dimensions
(Unit : mm)
TO-220FM
10.0
φ
3.2
4.5
2.8
Features
1) Low on-resistance.
2) Low input capacitance.
3) High ESD.
15.0
12.0
8.0
14.0
2.5
1.3
1.2
(1) Gate
(2) Drain
(3) Source
0.8
2.54
(1) (2) (3)
2.54
0.75
2.6
Application
Switching
Packaging specifications
Type
R8002ANX
Package
Code
Basic ordering unit (pieces)
Bulk
-
500
Inner circuit
∗1
Absolute maximum ratings
(Ta = 25C)
Symbol
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Avalanche current
Avalanche energy
Power dissipation
Channel temperature
Range of storage temperature
*1 Pw10s, Duty cycle1%
*2 L
500H, V
DD
=50V, R
G
=25, T
ch
=25°C
(1) Gate
(2) Drain
(3) Source
(1)
(2)
(3)
1
BODY DIODE
Limits
800
30
2
8
2
8
1
0.265
35
150
55
to
150
Unit
V
V
A
A
A
A
A
mJ
W
C
C
V
DSS
Continuous
Pulsed
Continuous
Pulsed
V
GSS
I
D
*3
I
DP
I
S
I
SP
*1
*3
*1
I
AS
*2
E
AS
*2
P
D
*4
T
ch
T
stg
*3 Limited only by maximum channel temperature allowed.
*4 T
C
=25°C
Thermal resistance
Parameter
Channel to Case
Symbol
R
th (ch-c)
Limits
3.57
Unit
C
/ W
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2011.10 - Rev.A
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