RB215T-40
Diodes
Schottky barrier diode
RB215T-40
Applications
Switching power supply
External dimensions
(Unit : mm)
4.5±0.3
0.1
Structure
①
1.2
1.3
0.8
(1) (2) (3)
13.5MIN
Construction
Silicon epitaxial planar
5.0±0.2
8.0±0.2
12.0±0.2
Features
1) Cathode common dual type.
(TO-220)
2) Low I
R
3) High reliability
10.0±0.3
0.1
2.8±0.2
0.1
15.0±0.4
0.2
8.0
0.7±0.1
0.05
2.6±0.5
ROHM : ＴO220FN
①
Manufacture Date
Absolute maximum ratings
(Ta=25°C)
Parameter
Forward voltage (repetitive peak)
Forward voltage (DC)
Average rectified forward current（*1）
Forward current surge peak
（60Hz・1cyc）（*1）
Junction temperature
Storage temperature
(*1)Tc=100℃max Per chip : Io/2
Symbol
V
RM
V
R
Io
I
FSM
Tj
Tstg
Limits
45
40
20
100
150
-40 to +150
Unit
V
V
A
A
℃
℃
Electrical characteristic
(Ta=25°C)
Parameter
Forward voltage
Reverse current
Thermal impedance
Symbol
V
F
I
R
θjc
Min.
-
-
-
Typ.
-
-
-
Max.
0.55
500
1.75
Unit
V
µA
℃/W
Conditions
I
F
=10A
V
R
=40V
junction to case
Rev.C
1/3
ROHM [ ROHM ]
