Data Sheet
Super Fast Recovery Diode
RF1005TF6S
Series
Standard Fast Recovery
Dimensions
(Unit : mm)
10
−0.1
+0.3
Structure
4.5
−0.1
+0.3
3.2
±0.2
2.8
−0.1
+0.2
Applications
General rectification
15
+0.4
−0.2
12
±0.2
(1)
8
±0.2
(3)
Features
1)Single type.(TO-220)
2)High switching speed
2.3
±0.3
1.02
1.12
0.76
Construction
Silicon epitaxial planer
14
±0.5
(1)
2.54
±0.5
(3)
2.54
±0.5
0.62
−0.05
+0.1
1.6MAX
2.6
±0.5
ROHM : TO220NFM
Manufacture Year
Manufacture Week
Absolute
maximum ratings
(Tc=25C)
Parameter
Symbol
V
RM
Repetitive peak reverse voltage
Reverse voltage
V
R
Average rectified forward current
Io
Forward current surge peak
Junction temperature
Storage temperature
Electrical
characteristics
(Tj=25C)
Parameter
Symbol
V
F
Forward voltage
I
R
Reverse current
Reverse recovery time(*)
trr
Thermal resistance(*)
Rth(j-c)
(*) : Design assurance without measurement.
Conditions
Duty
0.5
Direct voltage
60Hz half sin wave, Resistance load,
I
FSM
Tj
Tstg
Tc=78C
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25C
Limits
600
600
10
100
150
55
to
150
Unit
V
V
A
A
C
C
Conditions
I
F
=10A
V
R
=600V
I
F
=0.5A,I
R
=1A,Irr=0.25×I
R
junction to case
Min.
-
-
-
-
Typ.
1.4
0.05
30
-
Max.
1.7
10
40
3.5
Unit
V
μA
ns
C/
W
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2011.05 - Rev.A
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