Data Sheet
Super Fast Recovery Diode
RFN10NS3S
lSeries
Standard Fast Recovery
lDimensions
(Unit : mm)
lLand
size figure
(Unit : mm)
lApplications
General rectification
RFN10
NS3S
①
lFeatures
1)Low switching loss
2)High current overload capacity
3)Cathode common single type
ROHM : LPDS
JEITA : TO263S
lStructure
②
lConstruction
Silicon epitaxial planer
①
Manufacture Year, Week and Day
①
③
lTaping
dimensions
(Unit : mm)
lAbsolute
maximum ratings
(Tc=25C)
Parameter
Symbol
V
RM
Repetitive peak reverse voltage
V
R
Reverse voltage
Average rectified forward current
Io
Forward current surge peak
Junction temperature
Storage temperature
(*) 1-3pin common circuit
lElectrical
characteristics
(Tj=25C)
Parameter
Symbol
V
F
Forward voltage
Reverse current
Reverse recovery time (*)
I
R
trr
I
FSM
Tj
Tstg
Conditions
Duty≤0.5
Direct voltage
60Hz half sin wave resistive load
Tc=88°C
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25°C (*)
Limits
350
350
10
100
150
-55
to
+150
Unit
V
V
A
A
C
C
Conditions
I
F
=10A
V
R
=350V
I
F
=0.5A,I
R
=1A,Irr=0.25×I
R
junction to case
Min.
－
－
－
－
Typ.
1.25
0.05
22
－
Max.
1.5
10
30
4.0
Unit
V
μA
ns
°C/W
Thermal resistance
Rth(j-c)
(*) Design assurance without measurement.
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2011.10 - Rev.A
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