RJU002N06
Transistors
2.5V Drive Nch MOS FET
RJU002N06
Structure
Silicon N-channel MOS FET
External dimensions
(Unit : mm)
UMT3
2.0
0.9
0.3
Features
1) Low On-resistance.
2) Low voltage drive (2.5V drive).
0.2
0.7
(3)
1.25
(2)
(1)
2.1
0.65 0.65
1.3
0.15
Applications
Switching
(1) Source
(2) Gate
(3) Drain
Each lead has same dimensions
Abbreviated symbol : ML
Packaging specifications
Package
Type
RJU002N06
Code
Basic ordering unit (pieces)
Taping
T106
3000
Inner circuit
(3)
(2)
∗2
∗1
∗1
ESD PROTECTION DIODE
(1)
∗2
BODY DIODE
(1)
Source
(2)
Gate
(3)
Drain
Absolute maximum ratings
(Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Range of storage temperature
∗1
Pw≤10µs, Duty cycle≤1%
∗2
Each terminal mounted on a recommended land
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
∗1
P
D
∗2
Tch
Tstg
Limits
60
±12
±200
±800
200
150
−55
to
+150
Unit
V
V
mA
mA
mW
°C
°C
Thermal resistance
Parameter
Channel to ambient
∗
Each terminal mounted on a recommended land
Symbol
Rth(ch-a)
∗
Limits
625
Unit
°C/W
0.1Min.
1/2
ROHM [ ROHM ]
